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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7884381 B1

PDFFull Text
Date of Patent:
Feb. 08, 2011

Filed:

Jul. 29, 2009

Light emitting device and method for fabricating the same including a back surface electrode with an au alloy

Applicants:

Masahiro Arai, Hitachi, JP;

Kazuyuki Iizuka, Hitachi, JP;

Inventors:

Masahiro Arai, Hitachi, JP;

Kazuyuki Iizuka, Hitachi, JP;

Assignee:

Hitachi Cable, Ltd., Tokyo, JP;

Attorney:

McGinn Intellectual Property Law Group, PLLC

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01); H01L 29/22 (2006.01); H01L 29/227 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.

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