The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
May. 29, 2007
Takahiko Sakamoto, Anan, JP;
Yasutaka Hamaguchi, Komatsushima, JP;
Takahiko Sakamoto, Anan, JP;
Yasutaka Hamaguchi, Komatsushima, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships:0.3L≦X≦0.5L and 0.2L≦Y≦0.5Lwhere X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.