The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Aug. 31, 2009
Yoshiro Hirose, Toyama, JP;
Yushin Takasawa, Toyama, JP;
Tomohide Kato, Toyama, JP;
Nanori Akae, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Yushin Takasawa, Toyama, JP;
Tomohide Kato, Toyama, JP;
Nanori Akae, Toyama, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
A silicon nitride film including stoichiometrically excessive silicon with respect to nitrogen is formed. The silicon nitride film may be formed by supplying dichlorosilane to a substrate under a condition where CVD (chemical vapor deposition) reaction is caused to form a silicon film including several or less atomic layers on the substrate, supplying ammonia to the substrate in a non-plasma atmosphere to thermally nitride the silicon film under a condition where the nitriding reaction of the silicon film by the ammonia is not saturated, and alternately repeating the supplying of dichlorosilane and the supplying of ammonia.