The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Oct. 31, 2006
Applicants:
Yoshihiro Uozumi, Yokohama, JP;
Takashi Hirayama, Oita, JP;
Akira Kugita, Kamakura, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes subjecting a semiconductor substrate having an aluminum film formed thereabove to a processing to at least partially expose a surface of the aluminum film, and carrying out a surface processing to remove an after-processing residue that remains on the exposed surface of the aluminum film. The surface processing includes treating the exposed surface of the aluminum film with a first liquid chemical containing an anion component and then with an alkaline, second liquid chemical.