The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Sep. 17, 2009
Takuya Kobayashi, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Tomonori Aoyama, Yokohama, JP;
Hiroshi Tomita, Yokohama, JP;
Takuya Kobayashi, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Tomonori Aoyama, Yokohama, JP;
Hiroshi Tomita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.