The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Oct. 25, 2007
Minghao Shen, Sunnyvale, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Huaqiang Wu, Mountain View, CA (US);
Minghao Shen, Sunnyvale, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Huaqiang Wu, Mountain View, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Memory cells containing two split sub-lithographic charge storage nodes on a semiconductor substrate and methods for making the memory cells are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing an exposed portion of a fist poly layer between sloping side surfaces or outer surfaces of spacers while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing an exposed portion of a charge storage layer between sloping side surfaces or outer surfaces of spacers, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.