The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
May. 08, 2008
Che Ta Hsu, San Jose, CA (US);
Christopher J. Pass, San Jose, CA (US);
Dale Ibbotson, Pleasanton, CA (US);
Jeffrey T. Watt, Palo Alto, CA (US);
Yanzhong Xu, Santa Clara, CA (US);
Che Ta Hsu, San Jose, CA (US);
Christopher J. Pass, San Jose, CA (US);
Dale Ibbotson, Pleasanton, CA (US);
Jeffrey T. Watt, Palo Alto, CA (US);
Yanzhong Xu, Santa Clara, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type.