The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
May. 30, 2008
Jeffrey P. Gambino, Westford, VT (US);
Daniel N. Maynard, Craftsbury Common, VT (US);
Kevin N. Ogg, Burlington, VT (US);
Richard J. Rassel, Essex Junction, VT (US);
Raymond J. Rosner, Colchester, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Daniel N. Maynard, Craftsbury Common, VT (US);
Kevin N. Ogg, Burlington, VT (US);
Richard J. Rassel, Essex Junction, VT (US);
Raymond J. Rosner, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.