The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Feb. 10, 2004
Takao Saito, Nagoya, JP;
Yukinori Nakamura, Nagoya, JP;
Yoshimasa Kondo, Nagoya, JP;
Naoto Ohtake, Yokosuka, JP;
Takao Saito, Nagoya, JP;
Yukinori Nakamura, Nagoya, JP;
Yoshimasa Kondo, Nagoya, JP;
Naoto Ohtake, Yokosuka, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrateis mounted on at least one of opposing electrodesand. A pulse voltage is applied on the opposing electrodesandunder a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material 'A' including a carbon source to generate discharge plasma. A thin filmis thus formed on the substrate. The pulse voltage has a pulse duration of 10 to 1000 nsec.