The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Apr. 02, 2008
Delmar L. Barker, Tucson, AZ (US);
Mead M. Jordan, Tucson, AZ (US);
W. Howard Poisl, Tucson, AZ (US);
Delmar L. Barker, Tucson, AZ (US);
Mead M. Jordan, Tucson, AZ (US);
W. Howard Poisl, Tucson, AZ (US);
Raythedn Company, Waltham, MA (US);
Abstract
Ion implantation is used to grow nanotubes out of carbon and other materials. Catalytic material is placed on or in a membrane that physically and possibly environmentally separates an implantation chamber or region from a growth chamber or region. High-energy ions are implanted into the catalytic material from one side to grow nanotubes on an exposed surface in the growth chamber. Ion implantation via the membrane provides for greater flexibility to separate and independently control the implantation and growth processes.