The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Sep. 11, 2007
Tsun-neng Yang, Taipei, TW;
Shan-ming Lan, Taoyuan County, TW;
Chin-chen Chiang, Taoyuan County, TW;
Wei-yang MA, Taipei County, TW;
Chien-te Ku, Taoyuan County, TW;
Tsun-Neng Yang, Taipei, TW;
Shan-Ming Lan, Taoyuan County, TW;
Chin-Chen Chiang, Taoyuan County, TW;
Wei-Yang Ma, Taipei County, TW;
Chien-Te Ku, Taoyuan County, TW;
Abstract
In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.