The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Feb. 27, 2007
Ethan H. Cannon, Essex Junction, VT (US);
Alan J. Drake, Round Rock, TX (US);
Fadi H. Gebara, Austin, TX (US);
John P. Keane, Minneapolis, MN (US);
Aj Kleinosowski, Austin, TX (US);
Ethan H. Cannon, Essex Junction, VT (US);
Alan J. Drake, Round Rock, TX (US);
Fadi H. Gebara, Austin, TX (US);
John P. Keane, Minneapolis, MN (US);
AJ Kleinosowski, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A voltage measurement circuit measures the voltage at a tap in the charge injection circuit before and after the charge is injected. When the injected charge causes an upset in the logical state of the CUT, the critical charge is calculated as the product of the voltage difference and the known capacitance of the capacitor. In one embodiment, (NMOS drain strike simulation) the amount of charge injected is controlled by a variable pulse width generator gating the switch of the charge injection circuit. In another embodiment (PMOS drain strike simulation) the amount of charge injected is controlled by a variable voltage supply selectively connected to the charge storage node.