The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2011

Filed:

Mar. 08, 2010
Applicants:

Hiroyuki Nagashima, Yokohama, JP;

Yasuyuki Fukuda, Kamakura, JP;

Inventors:

Hiroyuki Nagashima, Yokohama, JP;

Yasuyuki Fukuda, Kamakura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile semiconductor memory of the present invention includes a plurality of bit lines and word lines which are arranged to intersect each other; a memory cell array having a plurality of electrically-programmable memory cells arranged in a region in which the bit lines and the word lines intersect; a trimming circuit configured to obtain a parameter of an initial program voltage for each word line of the plurality of word lines; an initial Vpgm parameter register configured to receive the parameter of the initial program voltage from the trimming circuit and to store the parameter; and a control circuit configured to perform programming of data to the memory cell array based on the parameter of the initial program voltage stored in the initial Vpgm parameter register, the trimming circuit being arranged in a part of the control circuit.


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