The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2011

Filed:

Apr. 29, 2008
Applicant:

Barry Harvey, Los Altos, CA (US);

Inventor:

Barry Harvey, Los Altos, CA (US);

Assignee:

Intersil Americas Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/16 (2006.01); G05F 3/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided herein are circuits and methods to generate a voltage proportional to absolute temperature (VPTAT) and/or a bandgap voltage output (VGO). A circuit includes a group of X transistors. A first subgroup of the X transistors are used to produce a first base-emitter voltage (VBE). A second subgroup of the X transistors are used to produce a second base-emitter voltage (VBE). The VPTAT can be produced by determining a difference between VBEand VBE. Which of the X transistors are in the first subgroup and used to produce the first base-emitter voltage (VBE), and/or which of the X transistors are in the second subgroup and used to produce the second base-emitter voltage (VBE), change over time. Additionally, a circuit portion can be used to generates a voltage complimentary to absolute temperature (VCTAT) using at least one of the X transistors. The VPTAT and the VCTAT can be added to produce the VGO.


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