The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jan. 20, 2005
Masahiro Orita, Tokyo, JP;
Hiroshi Kawazoe, Kanagawa, JP;
Satoshi Kobayashi, Tokyo, JP;
Hiroaki Yanagita, Tokyo, JP;
Morihiro Niimi, Saitama, JP;
Yuki Tani, Tokyo, JP;
Misaki Hatsuda, Tokyo, JP;
Masahiro Orita, Tokyo, JP;
Hiroshi Kawazoe, Kanagawa, JP;
Satoshi Kobayashi, Tokyo, JP;
Hiroaki Yanagita, Tokyo, JP;
Morihiro Niimi, Saitama, JP;
Yuki Tani, Tokyo, JP;
Misaki Hatsuda, Tokyo, JP;
Hoya Corporation, Tokyo, JP;
Abstract
A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate, an electron injection electrode, a hole injection electrode, and an inorganic light emitting layerdisposed so as to be in contact with both the electrodes. The inorganic light emitting layercontains an ambipolar inorganic semiconductor material and nanocrystalsdispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.