The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7880306 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 01, 2011

Filed:

Mar. 14, 2008
Applicant:

Yoshitaka Satou, Miyagi, JP;

Inventor:

Yoshitaka Satou, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate having a main surface; an element separation film formed on the main surface in an element separation area and extending in a first direction; and a semiconductor element formed on the main surface in an active area and arranged in a second direction perpendicular to the first direction. The semiconductor element includes a metal silicide film. The metal silicide film includes a first portion adjacent to the element separation film. The semiconductor device further includes an interlayer insulation film formed on the main surface of the semiconductor substrate; a wiring portion formed on the interlayer insulation film; and a conductive plug formed in the interlayer insulation film for electrically connecting the semiconductor elements and the wiring portion. The conductive plug is situated on the element separation film and the metal silicide film.


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Satou, Yoshitaka. (2011). Semiconductor device and method of producing the same (U.S. Patent No. 7880306). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7880306

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