The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Apr. 10, 2008
Qingqing Liang, Fishkill, NY (US);
Werner A. Rausch, Stormville, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Qingqing Liang, Fishkill, NY (US);
Werner A. Rausch, Stormville, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention, in one embodiment, provides a memory device including a substrate including at least one device region; a first field effect transistor having a first threshold voltage and a second field effect transistor having a second threshold voltage, the second field effect transistor including a second active region present in the at least one device region of the substrate, the second active region including a second drain and a second source separated by a second channel region, wherein the second channel region includes a second trap that stores holes produced when the first field effect transistor is in the on state, wherein the holes stored in the second trap increase the second threshold voltage to be greater than the first threshold voltage.