The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jun. 27, 2006
Tadao Ishibashi, Tokyo, JP;
Seigo Ando, Tokyo, JP;
Yukihiro Hirota, Atsugi, JP;
Yoshifumi Muramoto, Atsugi, JP;
Tadao Ishibashi, Tokyo, JP;
Seigo Ando, Tokyo, JP;
Yukihiro Hirota, Atsugi, JP;
Yoshifumi Muramoto, Atsugi, JP;
NTT Electronics Corporation, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
In an electron-injection type APD, it is necessary to prevent a dark current increase and to secure the life time of the device. It is demanded to improve reliability of the APD with a lower production cost. With the InP buffer layer having an n-type doping region on the inside of a region defined by an optical absorption layer, a predetermined doping profile is achieved by ion implantation. Thus, electric field concentration in the avalanche multiplication layer is relaxed. Furthermore, a low-concentration second optical absorption layer is provided between the optical absorption layer and the avalanche multiplication layer. Responsivity of the optical absorption layer is maximized, and depletion of the lateral surface of the optical absorption layer is prevented; thus, electric field concentration is prevented. Preventing edge breakdown, the device improves its reliability.