The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Mar. 05, 2007
Nathan F. Gardner, Sunnyvale, CA (US);
Gangyi Chen, San Jose, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Michael R. Krames, Los Altos, CA (US);
Gerd O. Mueller, San Jose, CA (US);
Yu-chen Shen, Sunnyvale, CA (US);
Satoshi Watanabe, Cupertino, CA (US);
Nathan F. Gardner, Sunnyvale, CA (US);
Gangyi Chen, San Jose, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Michael R. Krames, Los Altos, CA (US);
Gerd O. Mueller, San Jose, CA (US);
Yu-Chen Shen, Sunnyvale, CA (US);
Satoshi Watanabe, Cupertino, CA (US);
Koninklijke Phllips Electronics N.V., Eindhoven, NL;
Phillips Lumileds Lighting Company, LLC, San Jose, CA (US);
Abstract
In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×10cmand 5×10cm. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×10cm.