The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Dec. 27, 2006
Byung Soo Eun, Seoul, KR;
Byung Soo Eun, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for manufacturing a semiconductor device free from layer lifting between insulating layers. The method comprises forming a silicon oxide layer on a semiconductor substrate, forming a silicon rich oxynitride (SRON) layer as an etching mask on the silicon oxide layer, selectively removing the SRON layer used as the etching mask, performing surface treatment to the silicon oxide layer using plasma of a reaction gas containing oxygen to cure a portion of the silicon oxide layer contaminated by the SRON layer, and forming a silicon nitride layer on the surface-treated silicon oxide layer to have compressed stress by PE-CVD. The method effectively prevents the short-circuit phenomenon between metal contacts, thereby embodying an increase in yield of a semiconductor manufacturing process.