The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Feb. 16, 2009
Chung-wei Cheng, Miaoli County, TW;
Hwei-shen Chen, Taichung, TW;
Jenq-shyong Chen, Chiayi County, TW;
Chung-Wei Cheng, Miaoli County, TW;
Hwei-Shen Chen, Taichung, TW;
Jenq-Shyong Chen, Chiayi County, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
A method for patterning polycrystalline indium tin oxide by using a Gaussian laser beam focused on an amorphous indium tin oxide layer is disclosed to pattern the non-crystalline amorphous indium tin oxide layer and transfer part of the amorphous indium tin oxide layer into polycrystalline indium tin oxide while the remaining amorphous indium tin oxide layer is etched due to etching selectivity of an etching solution. The method comprises: providing a substrate with an amorphous indium tin oxide layer thereon on a carrier; transferring the amorphous indium tin oxide layer in a predetermined area into a polycrystalline indium tin oxide layer by emitting a Gaussian laser beam focused on the amorphous indium tin oxide layer in the predetermined area; and removing the remaining amorphous indium tin oxide layer on the substrate by an etching solution to form a patterned polycrystalline indium tin oxide layer.