The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Apr. 06, 2010
Hee-sook Park, Seoul, KR;
Hee-sook Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Embodiments of the invention provide a semiconductor integrated circuit device and a method for fabricating the device. In one embodiment, the method comprises forming a plurality of preliminary gate electrode structures in a cell array region and a peripheral circuit region of a semiconductor substrate; forming selective epitaxial films on the semiconductor substrate in the cell array region and the peripheral region; implanting impurities into at least some of the selective epitaxial films to form elevated source/drain regions in the cell array region and the peripheral circuit region; forming a first interlayer insulating film; and patterning the first interlayer insulating film to form a plurality of first openings exposing the elevated source/drain regions. The method further comprises forming a first ohmic film, a first barrier film, and a metal film; and removing portions of each of the metal film, the first barrier film, and the first ohmic film.