The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2011

Filed:

Feb. 24, 2004
Applicants:

Ui-jin Chung, Suwon-si, KR;

Dong-byum Kim, Seoul, KR;

Su-gyeong Lee, Seoul, KR;

Myung-koo Kang, Seoul, KR;

Hyun-jae Kim, Seongnam-si, KR;

Inventors:

Ui-Jin Chung, Suwon-si, KR;

Dong-Byum Kim, Seoul, KR;

Su-Gyeong Lee, Seoul, KR;

Myung-Koo Kang, Seoul, KR;

Hyun-Jae Kim, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/428 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.


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