The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Apr. 14, 2008
Applicant:
Richard W. Foote, Kennedale, TX (US);
Inventor:
Richard W. Foote, Kennedale, TX (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A system and method is described for applying a pre-gate plasma etch in a semiconductor device manufacturing process in order to increase the integrity of a subsequently grown gate oxide layer. During the manufacture of a semiconductor device a sacrificial oxide layer is grown over a silicon substrate. The pre-gate plasma etch process is applied to the sacrificial oxide layer. Then the sacrificial oxide layer is stripped away and a gate oxide layer is grown over the silicon substrate. The gate oxide layer has an increased integrity due to the application of the pre-gate plasma etch process.