The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jul. 23, 2008
Da Zhang, Hopewell Junction, NY (US);
Chendong Zhu, Beacon, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Melanie Sherony, Fishkill, NY (US);
Da Zhang, Hopewell Junction, NY (US);
Chendong Zhu, Beacon, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Melanie Sherony, Fishkill, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor process and apparatus fabricate a metal gate electrode () and an integrated semiconductor resistor () by forming a metal-based layer () and semiconductor layer () over a gate dielectric layer () and then selectively implanting the resistor semiconductor layer () in a resistor area () to create a conductive upper region () and a conduction barrier (), thereby confining current flow in the resistor semiconductor layer () to only the top region () in the finally formed device.