The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Dec. 05, 2006
Ryoichi Kajiwara, Hitachi, JP;
Kazutoshi Itou, Hitachi, JP;
Ryoichi Kajiwara, Hitachi, JP;
Kazutoshi Itou, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280° C. or more, and the bondability at 400° C. or less, and excellent in the suppliabilty and wettability of solder, and in the high-temperature storage reliability and the temperature cycle reliability. In the power semiconductor device according to the present invention, a semiconductor element and a metal electrode member were bonded each other by a high-temperature solder material comprising Sn, Sb, Ag, and Cu as the main constitutive elements and the rest of other unavoidable impurity elements wherein the high-temperature solder material comprises 42 wt %≦Sb/(Sn+Sb)≦48 wt %, 5 wt %≦Ag<20 wt %, 3 wt %≦Cu<10 wt %, and Ag+Cu≦25 wt %.