The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Nov. 04, 2005
Hiroyuki Nishide, Tokyo, JP;
Kenji Honda, Tokyo, JP;
Yasunori Yonekuta, Tokyo, JP;
Takashi Kurata, Tokyo, JP;
Shigemoto Abe, Tokyo, JP;
Hiroyuki Nishide, Tokyo, JP;
Kenji Honda, Tokyo, JP;
Yasunori Yonekuta, Tokyo, JP;
Takashi Kurata, Tokyo, JP;
Shigemoto Abe, Tokyo, JP;
Waseda University, Tokyo, JP;
Abstract
A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer () made of an electrical insulating radical polymer is provided between an anode layer () and a cathode layer (). Further, a hole injection transport layer () is provided between the switching layer () and the anode layer (), and an electron injection transport layer (), between the switching layer () and the cathode layer (). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (), the hole injection transport layer () and the electron injection transport layer () are formed by being stacked by a wet process.