The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2011

Filed:

Mar. 31, 2006
Applicants:

Michael Lenz, Zorneding, DE;

Ricardo Erckert, Bad Aibling, DE;

Gerrit Utz, Wartenberg, DE;

Inventors:

Michael Lenz, Zorneding, DE;

Ricardo Erckert, Bad Aibling, DE;

Gerrit Utz, Wartenberg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 5/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A protection arrangement for a power semiconductor component made of a plurality of cells, in which a current sensor made of a current sense transistor and current sense resistors and also a temperature sensor, is disclosed. The current sense transistor and the temperature sensor are provided in a gap or in different gaps between the cells, while the current sense resistor is fitted directly on at least one cell. The temperature sensor may, include a plurality of stages which are located from the center of the power semiconductor component to an edge of the latter in the gap between two cells.


Find Patent Forward Citations

Lenz, Michael. (2011). Protection arrangement for protecting a power semiconductor component against overcurrent and overtemperature (U.S. Patent No. 7876545). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7876545

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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