The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7875976 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 25, 2011

Filed:

Oct. 05, 2007
Applicants:

Makoto Wada, Kanagawa-ken, JP;

Takamasa Usui, Tokyo, JP;

Kazuya Ohuchi, Kanagawa-ken, JP;

Inventors:

Makoto Wada, Kanagawa-ken, JP;

Takamasa Usui, Tokyo, JP;

Kazuya Ohuchi, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one aspect of the present invention, a semiconductor device may include a semiconductor substrate, a silicide layer provided on the semiconductor substrate, a dielectric layer provided on the semiconductor substrate, a contact layer provided on the silicide layer, a metal layer provided in the dielectric layer and electrically connected to the silicide layer via the contact layer, a diffusion barrier layer provided between the dielectric layer and the metal layer, wherein the contact layer includes a first metal element provided in the metal layer, a second metal element provided in the diffusion barrier layer and at least one of a third metal provided in the silicide layer and Si element.


Find Patent Forward Citations

Wada, Makoto. (2011). Semiconductor device including a silicide layer and a dielectric layer (U.S. Patent No. 7875976). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7875976

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