The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2011

Filed:

Nov. 19, 2009
Applicants:

Norbert Linder, Lappersdorf, DE;

Günther Grönninger, Seubersdorf, DE;

Peter Heidborn, Zeitlarn, DE;

Klaus Streubel, Laaber, DE;

Siegmar Kugler, Regensburg, DE;

Inventors:

Norbert Linder, Lappersdorf, DE;

Günther Grönninger, Seubersdorf, DE;

Peter Heidborn, Zeitlarn, DE;

Klaus Streubel, Laaber, DE;

Siegmar Kugler, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 31/102 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of AlGaAsPwith 0≦x≦1 and 0≦y≦1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.


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