The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2011

Filed:

Mar. 08, 2007
Applicants:

Shanghui L. Tu, Phoenix, AZ (US);

Fumika Kuramae, Fuchu, JP;

Inventors:

Shanghui L. Tu, Phoenix, AZ (US);

Fumika Kuramae, Fuchu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive contact layer forms a first Schottky barrier with the region of semiconductor material. The conductive contact layer overlaps the second portion and forms a second Schottky barrier that has an opposite polarity to the first Schottky barrier. The conductive contact layer does not overlap the first portion, which forms a pn junction with the region of semiconductor material.


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