The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Mar. 29, 2005
Jens Schneider, Munich, DE;
Martin Wendel, Hohenbrunn, DE;
Jens Schneider, Munich, DE;
Martin Wendel, Hohenbrunn, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor device () includes a semiconductor body () of a first conductivity type (e.g., p-type). A first doped region () of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (). A second doped region () of the second conductivity type is disposed at the upper surface of the semiconductor body () and is separated from the first doped region () by an isolation region (). A first contact () overlies and is electrically coupled to the first doped region () and a second contact () overlies and is electrically coupled to the second doped region (). A third doped region () of the first conductivity type is disposed within the semiconductor body () beneath the first doped region ().