The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2011

Filed:

Jun. 27, 2008
Applicants:

Youichi Nagai, Osaka, JP;

Yasuhiro Iguchi, Osaka, JP;

Kouhei Miura, Osaka, JP;

Inventors:

Youichi Nagai, Osaka, JP;

Yasuhiro Iguchi, Osaka, JP;

Kouhei Miura, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate, an N-containing InGaAs-based absorption layerpositioned above the InP substrate, a window layerpositioned above the N-containing InGaAs-based absorption layer, and an InGaAs buffer layerpositioned between the N-containing InGaAs-based absorption layerand the window layer


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