The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Sep. 08, 2009
Applicants:
Nobuhiko Kobayashi, Sunnyvale, CA (US);
Shih Yuan Wang, Palo Alto, CA (US);
Inventors:
Nobuhiko Kobayashi, Sunnyvale, CA (US);
Shih Yuan Wang, Palo Alto, CA (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.
Kobayashi, Nobuhiko. (2011). Hetero-crystalline structure and method of making same (U.S. Patent No. 7875884). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7875884
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile