The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Sep. 24, 2002
Toshitsugu Sakamoto, Tokyo, JP;
Masakazu Aono, Tokyo, JP;
Tsuyoshi Hasegawa, Tokyo, JP;
Tomonobu Nakayama, Soka, JP;
Kazuya Terabe, Toda, JP;
Hisao Kawaura, Tokyo, JP;
Tadahiko Sugibayashi, Tokyo, JP;
Toshitsugu Sakamoto, Tokyo, JP;
Masakazu Aono, Tokyo, JP;
Tsuyoshi Hasegawa, Tokyo, JP;
Tomonobu Nakayama, Soka, JP;
Kazuya Terabe, Toda, JP;
Hisao Kawaura, Tokyo, JP;
Tadahiko Sugibayashi, Tokyo, JP;
Abstract
The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.