The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7875877 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 25, 2011

Filed:

Oct. 17, 2006
Applicants:

Jin-seong Park, Suwon-si, KR;

Min-chul Suh, Suwon-si, KR;

Taek Ahn, Suwon-si, KR;

Inventors:

Jin-Seong Park, Suwon-si, KR;

Min-Chul Suh, Suwon-si, KR;

Taek Ahn, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.


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