The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2011

Filed:

Dec. 20, 2005
Applicants:

Hiroyuki Matsuo, Nagano-ken, JP;

Kunihiro Miyazaki, Oita-ken, JP;

Toshiki Nakajima, Nagano-ken, JP;

Inventors:

Hiroyuki Matsuo, Nagano-ken, JP;

Kunihiro Miyazaki, Oita-ken, JP;

Toshiki Nakajima, Nagano-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NHOH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NHOH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from HO. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.


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