The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Mar. 28, 2008
Pawan Kapur, Palo Alto, CA (US);
Michael West Wiemer, Los Altos, CA (US);
Pawan Kapur, Palo Alto, CA (US);
Michael West Wiemer, Los Altos, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Various methods and devices are implemented using efficient silicon compatible integrated light communicators. According to one embodiment of the present invention, a semiconductor device is implemented for communicating light, such as by detecting, modulating or emitting light. The device has a silicon-seeding location, an insulator layer and a second layer on the insulator layer. The second layer includes a silicon-on-insulator region and an active region surrounded by the silicon-on-insulator region and connected to the silicon-seeding location. The active region includes a single-crystalline germanium-based material that extends from the silicon-seeding location through a passageway with a cross-sectional area that is sufficiently small to mitigate crystalline growth defects. The single-crystalline germanium-based material is physically coupled to the insulating layer such that the insulating layer introduces a high tensile strain to the germanium-based material, and a more specific aspect is directed to an SOI implementation.