The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2011

Filed:

Jun. 26, 2007
Applicants:

Dong-ming Yeh, Hsinchu, TW;

Horng-shyang Chen, Fongshan, TW;

Chih-feng LU, Wang-an Township, Penghu County, TW;

Chi-feng Huang, Taoyuan, TW;

Tsung-yi Tang, Taipei, TW;

Jian-jang Huang, Taipei, TW;

Yen-cheng LU, Banciao, TW;

Chih-chung Yang, Taipei, TW;

Jeng-jie Huang, Yi Chu Shiang, TW;

Yung-sheng Chen, Shengang Township, Taiching County, TW;

Inventors:

Dong-Ming Yeh, Hsinchu, TW;

Horng-Shyang Chen, Fongshan, TW;

Chih-Feng Lu, Wang-an Township, Penghu County, TW;

Chi-Feng Huang, Taoyuan, TW;

Tsung-Yi Tang, Taipei, TW;

Jian-Jang Huang, Taipei, TW;

Yen-Cheng Lu, Banciao, TW;

Chih-Chung Yang, Taipei, TW;

Jeng-Jie Huang, Yi Chu Shiang, TW;

Yung-Sheng Chen, Shengang Township, Taiching County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.


Find Patent Forward Citations

Loading…