The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jan. 19, 2009
Myeongjin Shin, San Ramon, CA (US);
Charles C. Lee, Cupertino, CA (US);
I-kang Yu, Palo Alto, CA (US);
Abraham Chih-kang MA, Fremont, CA (US);
MyeongJin Shin, San Ramon, CA (US);
Charles C. Lee, Cupertino, CA (US);
I-Kang Yu, Palo Alto, CA (US);
Abraham Chih-Kang Ma, Fremont, CA (US);
Super Talent Electronics, Inc., San Jose, CA (US);
Abstract
Solid state drive (SSD) testing processes and methods are disclosed. In one embodiment, the SSD testing process comprises: specifying a set of test parameters of firmware, operating system and flash memory for a plurality of SSDs under test (DUTs) in an SSD test system, the set of test parameters includes a model number, a serial number, a desired defective or bad block ratio and a size of the firmware, wherein the model and serial number are configured onto each of the DUTs; performing an initialization test of all of the DUTs based on the specified test parameters to determine a pre-qualified group of the DUTs that passed the initialization test; conducting at least one level of burn-in test for each SSD in the pre-qualified group; conducting at least one level of burn-in test for each SSD in the pre-qualified group; and assigning a quality grade to said each SSD based on which level of the at least one level of burn-in test said each SSD has been tested and passed, wherein the quality grade includes a commercial grade SSD made using at least one Multi-Level Cell flash memory.