The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2011

Filed:

Jun. 29, 2009
Applicants:

Rieko Tanaka, Yokohama, JP;

Koichi Fukuda, Yokohama, JP;

Takumi Abe, Mountain View, CA (US);

Inventors:

Rieko Tanaka, Yokohama, JP;

Koichi Fukuda, Yokohama, JP;

Takumi Abe, Mountain View, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes a sense amplifier which senses identical multilevel data, which is stored in a memory cell, a plurality of number of times at a time of read, and a n-channel MOS transistor which has a current path one end of which is connected to the sense amplifier and the other end of which is connected to a bit line. The device further include a control unit which applies a first voltage to a gate electrode of the n-channel MOS transistor, thereby setting the n-channel MOS transistor in an ON state, and applies a second voltage which is higher than the first voltage, to the gate electrode during a period after first sense and before second sense.


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