The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2011

Filed:

Jun. 29, 2009
Applicants:

Chae Kyu Jang, Gyeonggi-do, KR;

Seung Ho Chang, Chungcheongbuk-do, KR;

Young Soo Park, Seoul, KR;

Jae Yun Kim, Jeollanam-do, KR;

SE Chun Park, Seoul, KR;

Inventors:

Chae Kyu Jang, Gyeonggi-do, KR;

Seung Ho Chang, Chungcheongbuk-do, KR;

Young Soo Park, Seoul, KR;

Jae Yun Kim, Jeollanam-do, KR;

Se Chun Park, Seoul, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device includes a comparison unit configured to compare a reference voltage and a voltage of each of a plurality of nodes of a sample memory cell string, a state storage unit configured to store state information of each of memory cells depending on the corresponding comparison result of the comparison unit, and a high voltage generation unit configured to change a program start voltage depending on data stored in the state storage unit.


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