The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7872321 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 18, 2011

Filed:

Nov. 07, 2006
Applicants:

Kyung-ho Shin, Seoul, KR;

Jim-ki Hong, Seoul, KR;

Sung-jung Joo, Seoul, KR;

Kung-won Rhie, Daejeon, KR;

Inventors:

Kyung-Ho Shin, Seoul, KR;

Jim-Ki Hong, Seoul, KR;

Sung-Jung Joo, Seoul, KR;

Kung-Won Rhie, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.


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Shin, Kyung-Ho. (2011). Hybrid semiconductor-ferromagnet device with a junction structure of positive and negative magnetic-field regions (U.S. Patent No. 7872321). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7872321

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