The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jul. 23, 2009
Alessandro C. Callegari, Yorktown Heights, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Bruce B. Doris, Brewster, NY (US);
Vijay Narayanan, New York, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Michelle L. Steen, Danbury, CT (US);
Alessandro C. Callegari, Yorktown Heights, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Bruce B. Doris, Brewster, NY (US);
Vijay Narayanan, New York, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Michelle L. Steen, Danbury, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile