The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Mar. 04, 2010
Applicant:
Ryoji Takahashi, Saitama, JP;
Inventor:
Ryoji Takahashi, Saitama, JP;
Assignee:
Sanken Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/32 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/423 (2006.01); H01L 29/43 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
Abstract
An integrated switching device has a switching IGFET connected between a pair of main terminals, a protector IGFET connected between the drain and gate electrodes of the switching IGFET, and a gate resistor connected between a main control terminal and the gate electrode of the switching IGFET. The protector IGFET has its gate electrode connected to the source electrode of the switching IGFET. The protector IGFET turns on in response to an application of a verse voltage to the switching IGFET thereby protecting the same from a reverse current flow.