The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Feb. 09, 2009
Jin-taek Park, Suwon-si, KR;
Young-woo Park, Seoul, KR;
Jang-hyun You, Seoul, KR;
Jung-dal Choi, Suwon-Si, KR;
Jin-Taek Park, Suwon-si, KR;
Young-Woo Park, Seoul, KR;
Jang-Hyun You, Seoul, KR;
Jung-Dal Choi, Suwon-Si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
An integrated circuit includes flash memory cells, and peripheral circuitry including low voltage transistors (LVT) and high voltage transistors (HVT). The integrated circuit includes a tunnel barrier layer comprising SiON, SiN or other high-k material. The tunnel barrier layer may comprise a part of the gate dielectric of the HVTs. The tunnel barrier layer may constitute the entire gate dielectric of the HVTs. The corresponding tunnel barrier layer may be formed between or upon shallow trench isolation (STIs). Therefore, the manufacturing efficiency of a driver chip IC may be increased.