The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Aug. 14, 2006
Ji-young Kim, Yongin, KR;
Jin-jun Park, Seoul, KR;
Ji-Young Kim, Yongin, KR;
Jin-Jun Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, Kyungki-do, KR;
Abstract
A memory cell of a semiconductor device and a method for forming the same, wherein the memory cell includes a substrate having active regions and field regions, a gate layer formed over the substrate, the gate layer including a plurality of access gates formed over the active regions of the substrate and a plurality of pass gates formed over the field regions of the substrate, first self-aligned contact regions formed between adjacent pass gates and access gates, and second self-aligned contact regions formed between adjacent access gates, wherein a width of each of the first self-aligned contact regions is larger than a width of each of the second self-aligned contact regions.