The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Mar. 01, 2006
Shin Hashimoto, Itami, JP;
Makoto Kiyama, Itami, JP;
Tatsuya Tanabe, Itami, JP;
Kouhei Miura, Osaka, JP;
Takashi Sakurada, Osaka, JP;
Shin Hashimoto, Itami, JP;
Makoto Kiyama, Itami, JP;
Tatsuya Tanabe, Itami, JP;
Kouhei Miura, Osaka, JP;
Takashi Sakurada, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film () is provided on a gallium nitride substrate (). A layer region () is provided in the gallium nitride substrate () and the gallium nitride epitaxial film (). An interface between the gallium nitride substrate () and the gallium nitride epitaxial film () is positioned in the layer region (). In the layer region (), a peak value of donor impurity along an axis from the gallium nitride substrate () to the gallium nitride epitaxial film () is 1×10cmor more. The donor impurity is at least either silicon or germanium.