The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jul. 24, 2006
Liang-ying Huang, Hsinchu, TW;
Yi-kai Wang, Hsinchu, TW;
Tarng-shiang HU, Hsinchu, TW;
Jia-chong Ho, Hsinchu, TW;
Liang-Ying Huang, Hsinchu, TW;
Yi-Kai Wang, Hsinchu, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Jia-Chong Ho, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.