The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
May. 11, 2007
Applicants:
Hiromichi Ohta, Nagoya, JP;
Kunihito Koumoto, Nagoya, JP;
Yoriko Mune, Nagoya, JP;
Inventors:
Assignee:
National University Corporation Nagoya University, Nagoya-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 35/14 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO, and a quantum well layer containing SrTiOwhich has been converted into a semiconductor by doping an n-type impurity therein. The quantum well layer has a thickness 4 times or less the unit lattice thickness of SrTiOwhich has been converted into a semiconductor by doping an n-type impurity therein.